Semiconductor device assemblies including face-to-face semiconductor dice and related methods

ABSTRACT

Methods of manufacturing semiconductor device assemblies include attaching a back side of a first semiconductor die to a substrate and structurally and electrically coupling a first end of laterally extending conductive elements to conductive terminals on or in a surface of the substrate. Second ends of the laterally extending conductive elements are structurally and electrically coupled to bond pads on or in an active surface of the first semiconductor die. Conductive structures are structurally and electrically coupled to bond pads of a second semiconductor die. At least some of the conductive structures are aligned with at least some of the bond pads of the first semiconductor die. An active surface of the second semiconductor die faces an active surface of the first semiconductor die. At least some of the conductive structures are structurally and electrically coupled to at least some of the bond pads of the first semiconductor die.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.13/728,456, filed Dec. 27, 2012, now U.S. Pat. No. 8,927,332, issuedJan. 6, 2015, which application is a divisional of U.S. patentapplication Ser. No. 11/359,985, filed Feb. 22, 2006, now U.S. Pat. No.8,384,200, issued Feb. 26, 2013, and titled “Semiconductor DeviceAssemblies Including Face-To-Face Semiconductor Dice and SystemsIncluding Such Assemblies,” which claims foreign priority benefits ofSingapore Application No. 200601117-5, filed Feb. 20, 2006, thedisclosure of each of which is hereby incorporated herein in itsentirety by this reference.

BACKGROUND

The present invention relates generally to semiconductor deviceassemblies that include what are commonly referred to as “multi-chipmodules,” in which two or more semiconductor dice are stacked relativeto one another. More particularly, the present invention relates tosemiconductor device assemblies that include two semiconductor dicestacked together in a face-to-face configuration, laterally extendingconductive members providing electrical communication between bond padson active surfaces of the semiconductor dice and a substrate. Thepresent invention also relates to methods of manufacturing suchsemiconductor device assemblies.

Integrated circuit semiconductor devices are small electronic circuitsformed on or in a surface of a wafer of semiconductor material such as,for example, silicon, gallium arsenide, or other III-V typesemiconductor materials. Generally, a plurality of integrated circuitdevices is fabricated simultaneously on a single wafer. The wafer isthen subdivided into discrete devices (each of which is often referredto as a semiconductor “chip” or “die”), which then may be furtherprocessed and “packaged” to provide an end product. Packaging of asemiconductor device typically includes, among other processes,encapsulating at least a portion of the semiconductor die in adielectric material to electrically insulate and physically protect therelatively fragile semiconductor die. Such semiconductor devices areproduced and sold in various package configurations including, forexample, lead frame configurations, chip-on-board (COB) configurations,board-on-chip (BOC) configurations, and flip-chip configurations.

The continuing demand for miniaturization of high performance electronicdevices (such as cell phones, portable computers, and other hand-helddevices) has required that integrated circuit semiconductor devices beas small as possible and consume as little surface area as possible onthe circuit boards or other substrates on which they are mounted.

In an effort to conserve the amount of surface area occupied byintegrated circuit devices on a substrate, various types of increaseddensity packages have been developed. Among these semiconductor devicepackages are the so-called multi-chip modules (MCM), which may includeassemblies of semiconductor devices that are stacked one on top ofanother. The amount of surface area on a carrier substrate that may besaved by stacking semiconductor devices is readily apparent—a stack ofsemiconductor devices consumes roughly the same surface area on acarrier substrate as a single, horizontally oriented semiconductordevice or semiconductor device package.

Multi-chip modules may contain a number of semiconductor devices thatperform the same or different functions, effectively combining thefunctionality of all of the semiconductor devices thereof into a singlepackage.

A multi-chip module 10 is shown in FIG. 1A. The multi-chip module 10 isconfigured as a chip-on-board (COB) type semiconductor package, in whicha first semiconductor die 12 having an active surface 14 and a back side15 is mounted on a substrate 22 such that the active surface 14 facesupward and the back side 15 is disposed adjacent and attached to thesubstrate 22 by way of an adhesive material 24.

The multi-chip module 10 also includes a second semiconductor die 16having an active surface 18 and a back side 19. The second semiconductordie 16 is mounted to and positioned vertically above the firstsemiconductor die 12 such that the active surface 18 faces upward andthe back side 19 is disposed adjacent and attached to the firstsemiconductor die 12 by way of an adhesive material 24.

The first semiconductor die 12 may include a plurality of electricallyconductive bond pads 28 disposed on the active surface 14 thereof, andthe second semiconductor die 16 may include a plurality of electricallyconductive bond pads 28′ disposed on the active surface 18 thereof. Theconductive bond pads 28, 28′ may electrically communicate with theintegrated circuits contained within each of the respectivesemiconductor dice 12, 16. As shown in FIG. 1B, the bond pads 28, 28′may be disposed in one or more rows extending substantially along orproximate to a centerline 21 of each of the first semiconductor die 12and the second semiconductor die 16.

Laterally extending conductive elements 26 such as bond wires are usedto provide electrical communication between conductive bond pads 28 onthe active surface 14 of the first semiconductor die 12 and conductiveterminals 30 on a first surface of the substrate 22, and betweenconductive bond pads 28′ on the active surface 18 of the secondsemiconductor die 16 and the conductive terminals 30 on the firstsurface of the substrate 22. The multi-chip module 10 may also includean encapsulating material 36 that is used to protect and insulate thefirst semiconductor die 12, the second semiconductor die 16, and thelaterally extending conductive elements 26.

Horizontally extending conductive traces and vertically extendingconductive vias may be used to provide electrical communication betweenthe conductive terminals 30 and conductive terminals 32 provided on asecond, opposite surface of the substrate 22. Conductive solder bumps 34may be provided on the conductive terminals 32 and used to structurallyand electrically couple the multi-chip module 10 to a higher-levelsubstrate such as a circuit board.

Another multi-chip module 38 is shown in FIG. 2. The multi-chip module38 is configured as a board-on-chip (BOC) type semiconductor package, inwhich a first semiconductor die 12 having an active surface 14 and aback side 15 is mounted on a substrate 40 such that the active surface14 faces downward and is disposed adjacent and attached to the substrate40 by way of an adhesive material 24.

The substrate 40 shown in FIG. 2 is substantially similar to thesubstrate 22 shown in FIG. 1A. The substrate 40, however, also includesan aperture 42 through which the plurality of bond pads 28 disposed onthe active surface 14 of the first semiconductor die 12 are exposed.Laterally extending conductive elements 26 such as bond wires thatextend through the aperture 42 are used to provide electricalcommunication between the bond pads 28 disposed on the active surface 14of the first semiconductor die 12 and conductive terminals or traces onthe second side of the substrate 40 opposite the semiconductor die 12.

The multi-chip module 38 also includes a second semiconductor die 16having an active surface 18 and a back side 19. The second semiconductordie 16 is mounted to and positioned vertically above the firstsemiconductor die 12 such that the active surface 18 faces upward andthe back side 19 is disposed adjacent and attached to the back side 15of the first semiconductor die 12 by way of an adhesive material 24.Laterally extending conductive elements 26 such as bond wires are usedto provide electrical communication between the bond pads 28′ disposedon the active surface 18 of the second semiconductor die 16 andconductive terminals 30 on the substrate 40. As previously discussed inrelation to FIG. 1B, the bond pads 28 of the first semiconductor die 12and the bond pads 28′ of the second semiconductor die 16 may be disposedin one or more rows extending substantially along or proximate to acenterline 21 of each of the first semiconductor die 12 and the secondsemiconductor die 16.

The multi-chip module 38 may also include an encapsulating material 36that is used to protect and insulate the first semiconductor die 12, thesecond semiconductor die 16, and the laterally extending conductiveelements 26.

Horizontally extending conductive traces and vertically extendingconductive vias may be used to provide electrical communication betweenthe conductive terminals 30 and conductive terminals 32 provided on asecond, opposite surface of the substrate 22. Conductive solder bumps 34may be provided on the conductive terminals 32 and used to structurallyand electrically couple the multi-chip module 38 to a higher-levelsubstrate such as a circuit board.

A large number of manufacturing processes or steps are required tofabricate the devices shown in FIGS. 1A and 1B and FIG. 2, each of whichcontributes to the cost of the device.

There is a need for multi-chip modules that require fewer manufacturingprocesses for fabrication thereof, include fewer components, exhibitimproved electrical performance, and that are smaller than multi-chipmodules presently known in the art.

BRIEF SUMMARY

The features, advantages, and alternative aspects of the presentinvention will be apparent to those skilled in the art from aconsideration of the following detailed description taken in combinationwith the accompanying drawings.

In one aspect, the present invention includes a semiconductor deviceassembly. The semiconductor device assembly includes a firstsemiconductor die and at least a second semiconductor die. Thesemiconductor device assembly may include a substrate with a pluralityof conductive terminals disposed on or in a surface thereof. The firstsemiconductor die has an active surface with a plurality of bond padsdisposed in a first selected connection pattern on or in the activesurface. The second semiconductor die also includes an active surfacewith a plurality of bond pads disposed in a second selected connectionpattern on or in the active surface. The active surface of the firstsemiconductor die faces the active surface of the second semiconductordie. Each of a plurality of conductive structures may be electricallyand structurally coupled to a bond pad of the first semiconductor dieand a bond pad of the second semiconductor die. A first end of each of aplurality of laterally extending conductive elements may be structurallyand electrically coupled to a conductive terminal of the substrate, anda second end of each laterally extending conductive element isstructurally and electrically coupled to at least one of a bond pad ofthe first semiconductor die, a bond pad of the second semiconductor die,and a conductive structure.

In another aspect, the present invention includes an electronic systemthat includes at least one memory device, at least one electronic signalprocessing device, and at least one input or output device. The at leastone memory device includes a semiconductor device assembly that has asubstrate, a first semiconductor die, and at least a secondsemiconductor die. The substrate may have a plurality of conductiveterminals disposed on or in a surface thereof. The first semiconductordie includes an active surface with a plurality of bond pads disposed ina first selected connection pattern on or in the active surface. Thesecond semiconductor die also includes an active surface with aplurality of bond pads disposed in a second selected connection patternon or in the active surface. The active surface of the firstsemiconductor die faces the active surface of the second semiconductordie. Each of a plurality of conductive structures is electrically andstructurally coupled to a bond pad of the first semiconductor die and abond pad of the second semiconductor die. A first end of each of aplurality of laterally extending conductive elements may be structurallyand electrically coupled to a conductive terminal of the substrate, anda second end of each bond wire is structurally and electrically coupledto at least one of a bond pad of the first semiconductor die, a bond padof the second semiconductor die, and a conductive structure.

In yet another aspect, the present invention includes a method ofassembling semiconductor device components. A back side of a firstsemiconductor die may be attached to a substrate. A first end of each ofa plurality of laterally extending conductive elements may bestructurally and electrically coupled to one of a plurality ofconductive terminals on or in a surface of the substrate, and a secondend of each of the laterally extending conductive elements may bestructurally and electrically coupled to one of a plurality of bond padson or in an active surface of the first semiconductor die. At least someof a plurality of conductive structures may be structurally andelectrically coupled to one of a plurality of bonds pads of a secondsemiconductor die. At least some of the conductive structures arealigned with at least some bond pads of the first semiconductor die, theactive surface of the second semiconductor die facing an active surfaceof the first semiconductor die. At least some of the conductivestructures are structurally and electrically coupled to at least some ofthe bond pads of the first semiconductor die.

BRIEF DESCRIPTION OF THE DRAWINGS

While the specification concludes with claims particularly pointing outand distinctly claiming that which is regarded as the present invention,the advantages of this invention can be more readily ascertained fromthe following description of the invention when read in conjunction withthe accompanying drawings in which:

FIG. 1A is a cross-sectional side view of a known multi-chip module;

FIG. 1B is a top plan view of a semiconductor die of the multi-chipmodule shown in FIG. 1A;

FIG. 2 is a cross-sectional side view of another known multi-chipmodule;

FIG. 3 is a cross-sectional side view of an illustrative semiconductordevice assembly that embodies teachings of the present invention;

FIG. 4A is a cross-sectional side view of another illustrativesemiconductor device assembly that embodies teachings of the presentinvention;

FIG. 4B is a cross-sectional view of the semiconductor device assemblyshown in FIG. 4A taken along section line 4B-4B shown therein;

FIG. 5 is a cross-sectional view of another illustrative semiconductordevice assembly that embodies teachings of the present invention;

FIG. 6 is a cross-sectional side view of yet another illustrativesemiconductor device assembly that embodies teachings of the presentinvention;

FIGS. 7A-7C illustrate various subassemblies that may be used tofabricate multi-chip modules that embody teachings of the presentinvention at the wafer level; and

FIG. 8 is a block diagram of an illustrative electronic system thatembodies teachings of the present invention.

DETAILED DESCRIPTION

In the description which follows, like features and elements have beenidentified by the same or similar reference numerals for ease ofidentification and enhanced understanding of the disclosure hereof. Suchidentification is by way of convenience for the reader only, however,and is not limiting of the present invention or an implication thatfeatures and elements of various components and embodiments identifiedby like reference numerals are identical or constrained to identicalfunctions.

An illustrative semiconductor device assembly 50 that embodies teachingsof the present invention is shown in FIG. 3. The semiconductor deviceassembly 50 includes a multi-chip module, which may include a firstsemiconductor die 12, a second semiconductor die 16, and a substrate 22.The first semiconductor die 12 may include an active surface 14, a backside 15, and a plurality of bond pads 28 disposed on or in the activesurface 14. Similarly, the second semiconductor die 16 may include anactive surface 18, a back side 19, and a plurality of bond pads 28′disposed on or in the active surface 18. Each of the bond pads 28, 28′may electrically communicate with integrated circuitry (not shown)contained within the semiconductor die on or in which the respectivebond pad 28, 28′ is disposed, and each bond pad 28, 28′ may beconfigured to carry input/output signals, power voltages, or groundvoltages to the integrated circuits contained within the semiconductordice 12, 16.

The integrated circuit contained within the second semiconductor die 16may be substantially identical to the integrated circuit containedwithin the first semiconductor die 12. Alternatively, the integratedcircuit contained within the second semiconductor die 16 may differ fromthe integrated circuit contained within the first semiconductor die 12.Moreover, the semiconductor device assembly 50 may include one or moreadditional semiconductor dice stacked above the second semiconductor die16.

The bond pads 28 of the first semiconductor die 12 and the bond pads 28′of the second semiconductor die 16 may be disposed in one or more rowsextending substantially along or proximate to a centerline 21 of each ofthe respective dice in a manner similar to that illustrated in FIG. 1B.In this particular configuration, the bond pads 28′ on or in the activesurface 18 of the second semiconductor die 16 may be disposed in aconnection pattern that is substantially identical to a connectionpattern in which the bond pads 28 on or in the active surface 14 of thefirst semiconductor die 12 are disposed. In other embodiments, the bondpads 28 of the first semiconductor die 12 and the bond pads 28′ of thesecond semiconductor die 16 may be disposed in other connectionpatterns.

The active surface 14 of the first semiconductor die 12 may face theactive surface 18 of the second semiconductor die 16. At least some ofthe bond pads 28 of the first semiconductor die 12 may be disposed in afirst selected connection pattern, and at least some of the bond pads28′ of the second semiconductor die 16 may be disposed in a secondselected connection pattern that is a mirror image of the first selectedconnection pattern. In this configuration, at least some of the bondpads 28 of the first semiconductor die 12 may be aligned with at leastsome of the bond pads 28′ of the second semiconductor die 16 when thefirst semiconductor die 12 and the second semiconductor die 16 areoriented and aligned in a face-to-face (or active surface-to-activesurface) configuration.

Laterally extending conductive elements 26 may be used to provideelectrical communication between conductive bond pads 28 on the activesurface 14 of the first semiconductor die 12 and conductive terminals 30on a first surface of the substrate 22, and between conductive bond pads28′ on the active surface 18 of the second semiconductor die 16 and theconductive terminals 30 on the first surface of the substrate 22. By wayof example and not limitation, the laterally extending conductiveelements 26 may include bond wires. Alternatively, the laterallyextending conductive elements 26 may include conductive leads of a leadframe or conductive traces carried by a flexible dielectric substratesuch as tape or film, such as those used in conventional tape automatedbonding (TAB) processes. A first end of each laterally extendingconductive element 26 may be electrically and structurally coupled to aconductive terminal 30 on a surface of the substrate 22, and a second,opposite end of each laterally extending conductive element 26 may beelectrically and structurally coupled to at least one of a bond pad 28on the active surface 14 of the first semiconductor die 12, a bond pad28′ on the active surface 18 of the second semiconductor die 16, and aconductive structure 52. By way of example and not limitation, thesecond end of each laterally extending conductive element 26 may beelectrically and structurally coupled to both a bond pad 28 on theactive surface 14 of the first semiconductor die 12 and a conductivestructure 52.

Each bond pad 28′ disposed on the active surface 18 of the secondsemiconductor die 16 may be electrically and structurally coupled to abond pad 28 disposed on the active surface 14 of the first semiconductordie 12 by way of a conductive structure 52. Each conductive structure 52may be electrically and structurally coupled directly to a bond pad 28of the first semiconductor die 12 and directly to a bond pad 28′ of thesecond semiconductor die 16. By way of example and not limitation, theelectrically conductive structures 52 may include electricallyconductive metal balls or bumps. Such electrically conductive metalballs or bumps may include, for example, gold, silver, platinum, copper,alloys of such metals, or a solder alloy. Alternatively, theelectrically conductive structures 52 may include conductor-filled epoxymaterial or anisotropically conductive tape or film. The electricallyconductive structures 52 may be used to at least partially secure thesecond semiconductor die 16 to the first semiconductor die 12, inaddition to providing electrical communication between the bond pads 28′disposed on the active surface 18 of the second semiconductor die 16 andthe bond pads 28 disposed on the active surface 14 of the firstsemiconductor die 12 and the laterally extending conductive elements 26.

Alternatively, only some of the bond pads 28′ disposed on the activesurface 18 of the second semiconductor die 16 may be electrically andstructurally coupled to a bond pad 28 disposed on the active surface 14of the first semiconductor die 12. For example, at least one of the bondpads 28 disposed on the active surface 14 of the first semiconductor die12 may be electrically isolated from all of the bond pads 28′ disposedon the active surface 18 of the second semiconductor die 16. Similarly,at least one of the bond pads 28′ disposed on the active surface 18 ofthe second semiconductor die may be electrically isolated from all ofthe bond pads 28 disposed on the active surface 14 of the firstsemiconductor die 12.

The semiconductor device assembly 50 may also include a plurality ofdielectric structures 54 disposed between the active surface 14 of thefirst semiconductor die 12 and the active surface 18 of the secondsemiconductor die 16. The dielectric structures 54 may be configured toat least partially secure the second semiconductor die 16 to the firstsemiconductor die 12. Moreover, the dielectric structures 54 may beconfigured to separate the second semiconductor die 16 from the firstsemiconductor die 12 by a selected, fixed distance. The dielectricstructures 54 may additionally or alternatively be configured to supportthe laterally extending conductive elements 26 between the firstsemiconductor die 12 and the second semiconductor die 16 in a mannerthat prevents or minimizes physical contact and/or electrical shortingbetween the laterally extending conductive elements 26 and the activesurfaces 14, 18 of the semiconductor dice 12, 16. At least a portion ofeach laterally extending conductive element 26 may pass through at leastone dielectric structure 54. In this configuration, each dielectricstructure 54 may be configured to support and hold at least a portion ofthe laterally extending conductive element 26 passing therethroughbetween the active surface 14 of the first semiconductor die 12 and theactive surface 18 of the second semiconductor die 16. Moreover, eachdielectric structure 54 may be attached to both the active surface 14 ofthe first semiconductor die 12 and the active surface 18 of the secondsemiconductor die 16.

Each dielectric structure 54 may comprise a discrete dot, glob, or bumpof adhesive material, as shown in FIG. 3. The adhesive material maycomprise a thermoplastic polymer resin or a thermoset polymer resin(such as, for example, silicone, a silicone-based material, an epoxy, oran epoxy-based material). Moreover, the adhesive material may include afiller material such as, for example, particles of alumina or silica. Inalternative embodiments, each dielectric structure 54 may include apreformed dielectric structure secured to one or both of the firstsemiconductor die 12 and the second semiconductor die 16. By way ofexample and not limitation, each dielectric structure 54 may include afirst piece of dielectric tape or film attached to the active surface 14of the first semiconductor die 12 and a second piece of dielectric tapeor film attached to both the first piece of dielectric tape or film andthe active surface 18 of the second semiconductor die 16, as describedin further detail below.

The semiconductor device assembly 50 may include an encapsulant material36 to physically protect and electrically insulate the firstsemiconductor die 12, the second semiconductor die 16, and the laterallyextending conductive elements 26. The encapsulant material 36 mayinclude, for example, a thermoplastic polymer resin or a thermosetpolymer resin (such as, for example, silicone, silicone-based materials,epoxy and epoxy-based materials), which may be filled with particulatematerial (such as, for example, alumina or silica particles).Alternatively, the encapsulant material 36 may include a ceramicmaterial (such as, for example, silicon nitride or alumina). Thecomposition of the encapsulant material 36 may be selected and/ortailored to exhibit a thermal expansion coefficient that issubstantially similar to a coefficient of thermal expansion exhibited bythe first semiconductor die 12 and the second semiconductor die 16.Moreover, the size and shape of the discrete dielectric structures 54may be selected to facilitate introduction of the encapsulant material36 into the space between the first semiconductor die 12 and the secondsemiconductor die 16, and may be selected to provide a selected orpredetermined stand-off between the first semiconductor die 12 and thesecond semiconductor die 16. In this configuration, defects and failuresdue to thermal expansion mismatch, which may occur when thesemiconductor device assembly 50 is subjected to thermal cycling duringoperation, may be reduced or minimized.

By way of example and not limitation, the substrate 22 may include acircuit board. The substrate 22 may be substantially comprised of, forexample, Bismalemide Triazine (BT) resin, a ceramic, or comprise anFR-4, or FR-5 laminate. Alternatively, the substrate 22 may comprise aninterposer, a tape substrate or other type of flexible substrate, asemiconductor die, a complete semiconductor wafer, or a partialsemiconductor wafer. Conductive traces that extend horizontally on orthrough the substrate 22 and conductive vias that extend substantiallyvertically through the substrate 22 may be used to provide electricalcommunication between the conductive terminals 30 on the first surfaceof the substrate 22 and conductive terminals 32 provided on a second,opposite surface of the substrate 22. Conductive solder balls or bumps34 may be provided on the conductive terminals 32 and used tostructurally and electrically couple the semiconductor device assembly50 to a higher-level substrate such as a circuit board. Alternatively,conductive or conductor-filled epoxy material or anisotropicallyconductive tape or film may be provided on the conductive terminals 32and used to structurally and electrically couple the semiconductordevice assembly 50 to a higher-level substrate.

The first semiconductor die 12 may be mounted on the substrate 22 suchthat the back side 15 is disposed adjacent and attached to the substrate22. By way of example and not limitation, the back side 15 of the firstsemiconductor die 12 may be attached to a surface of the substrate 22 byway of an adhesive material 24. The adhesive material 24 may includecommercially available die attach paste, double-sided adhesive tape orfilm, a thermoplastic polymer material, or a thermoset polymer material.Die attach pastes are commercially available from, for example, Ablestikof Rancho Dominguez, Calif.

As an illustrative method for forming the semiconductor device assembly50 shown in FIG. 3, the substrate 22 (such as, for example, a circuitboard), the first semiconductor die 12, and the second semiconductor die16 each may be provided. Such substrates and semiconductor dice arecommercially available. Alternatively, the substrate 22 and thesemiconductor dice 12, 16 may be fabricated using techniques known inthe art. The back side 15 of the first semiconductor die 12 may beattached to a surface of the substrate 22 by, for example, using thepreviously described adhesive material 24. The adhesive material 24 maybe applied to the substrate 22, the back side 15 of the firstsemiconductor die 12, or to both the substrate 22 and the back side 15of the first semiconductor die 12. If the adhesive material 24 comprisesa curable fluid, gel, or paste, the adhesive material 24 may be appliedin the fluid form as previously described, the back side 15 of the firstsemiconductor die 12 may be pressed or held against the substrate 22,and the adhesive material 24 may be consolidated or cured to a solidform by, for example, subjecting the adhesive material 24 to heat orelectromagnetic radiation (such as, for example, ultraviolet radiation).

A plurality of laterally extending conductive elements 26 may beprovided. A first end of each laterally extending conductive element 26may be structurally and electrically coupled to a conductive terminal 30on or in a surface of the substrate 22. A second end of each laterallyextending conductive element 26 may be structurally and electricallycoupled to a bond pad 28 on or in an active surface of the firstsemiconductor die 12. By way of example and not limitation, thelaterally extending conductive elements 26 may include bond wires, andconventional wire bonding techniques and equipment known in the art maybe used to structurally and electrically couple the ends of such bondwires to the conductive terminals 30 and the bond pads 28. As anexample, wire bonding machines and equipment are available from, forexample, Kulick and Soffa of Willow Grove, Pa. and Palomar Technologiesof Carlsbad, Calif.

Prior to securing the second semiconductor die 16 to the firstsemiconductor die 12, a conductive structure 52 may be structurally andelectrically coupled to each of at least some of the bond pads 28′ on orin the active surface 18 of the second semiconductor die 16. Equipment,machines, and methods for structurally and electrically couplingconductive structures such as, for example solder balls or bumps,conductive or conductor-filled epoxy balls or bumps, etc., are known inthe art and may be used to structurally and electrically couple aconductive structure 52 to each of at least some of the bond pads 28′ onor in the active surface 18 of the second semiconductor die 16.

The second semiconductor die 16 may be oriented and positioned relativeto the first semiconductor die 12 such that the active surface 18 of thesecond semiconductor die 16 faces the active surface 14 of the firstsemiconductor die, and such that at least some conductive structures 52of the plurality are aligned with and contacting at least some bond pads28 of the first semiconductor die 12. At least a portion of somelaterally extending conductive elements 26 (a portion proximate the endof each laterally extending conductive element 26 that is coupled to abond pad 28 of the first semiconductor die 12) may be pinned orsandwiched between a conductive structure 52 and a bond pad 28 of thefirst semiconductor die as the conductive structures 52 are brought intophysical contact with the bond pads 28 of the first semiconductor die12. In other words, at least some conductive structures 52 may bealigned with and pressed against a point of attachment or couplingbetween a laterally extending conductive element 26 and a bond pad 28 ofthe first semiconductor die 12. Alternatively, at least some conductivestructures 52 may be aligned with and pressed against a bond pad 28 ofthe first semiconductor die 12 at a location or point that is laterallyadjacent a point of attachment or coupling between a laterally extendingconductive element 26 and a bond pad 28 of the first semiconductor die12. These conductive structures 52 then may be structurally andelectrically coupled to the corresponding bond pads 28 of the firstsemiconductor die 12 with which the conductive structures 52 are alignedand in physical contact.

By way of example and not limitation, if the conductive structures 52include solder balls or bumps, the solder balls or bumps may besubjected to a reflow process at an elevated temperature to structurallyand electrically couple the solder balls or bumps to the bond pads 28 ofthe first semiconductor die 12. If the bond pads 28 of the firstsemiconductor die 12, the bond pads 28′ of the second semiconductor die16, and the conductive structures 52 include or are coated with gold ora gold alloy, the conductive structures 52 may be structurally andelectrically coupled to the corresponding bond pads 28 of the firstsemiconductor die 12 using an ultrasonic welding process or a simplepressure contact process to form what is often referred to as a“gold-to-gold interconnect” (GGI) structure. If the conductivestructures 52 include a curable conductive or conductor-filled epoxymaterial, dots, bumps, or globs of epoxy material may be applied to thebond pads 28′ of the second semiconductor die 16 (or to the bond pads 28of the first semiconductor die 12) in fluid form, the secondsemiconductor die 16 may be aligned with the first semiconductor die 12as previously described such that each glob of epoxy material is indirect physical contact with both a bond pad 28 of the firstsemiconductor die 12 and a bond pad 28′ of the second semiconductor die16. Each glob of epoxy material may also be in direct physical contactwith at least a portion of a laterally extending conductive element 26.The epoxy material then may be cured to a solid state by, for example,subjecting the epoxy material to heat or electromagnetic radiation (suchas, for example, ultraviolet radiation). In this manner, the second endof at least some of the laterally extending conductive elements 26 maybe structurally and electrically coupled to at least one bond pad 28 ofthe first semiconductor die 12, a bond pad 28′ of the secondsemiconductor die 16, and a conductive structure 52 when the conductivestructures 52 are structurally and electrically coupled to the bond pads28 of the first semiconductor die 12.

If each dielectric structure 54 includes a dot, bump, or glob ofdielectric adhesive material such as, for example, a thermoplasticpolymer resin or a thermoset polymer resin as previously described, thedielectric adhesive material may by applied to the surface of the firstsemiconductor die 12 after providing the laterally extending conductiveelements 26 and prior to securing the second semiconductor die 16 to thefirst semiconductor die 12 such that at least a portion of eachlaterally extending conductive element 26 extends through the dot, glob,or bump of dielectric adhesive material. By way of example and notlimitation, globs of the dielectric adhesive material may be applied ina fluid state to the surface of the first semiconductor die 12 afterproviding the laterally extending conductive elements 26 such that aportion of each laterally extending conductive element 26 extendsthrough and is covered by a glob of dielectric adhesive material. Thesecond semiconductor die 16 then may be aligned with and positionedrelative to the first semiconductor die 12. The globs of dielectricadhesive material may be sized such that each glob is in direct contactwith both the first semiconductor die 12 and the second semiconductordie 16 when the second semiconductor die 16 is aligned with andpositioned relative to the first semiconductor die 12. The fluiddielectric adhesive material then may be consolidated or cured to form asolid dielectric structure 54. As a result, each dielectric structure 54may be attached to both the active surface 14 of the first semiconductordie 12 and the active surface 18 of the second semiconductor die 16.

Alternatively, the dielectric adhesive material may be applied to asurface of the second semiconductor die 16, or globs of the dielectricadhesive material may be applied to the surface of the firstsemiconductor die 12 in a first pattern, and globs of the dielectricadhesive material may be applied to the surface of the secondsemiconductor die 16 in a second pattern that is a mirror image of thefirst pattern, such that the globs of dielectric adhesive material onthe first semiconductor die 12 are aligned with the globs of dielectricadhesive material on the second semiconductor die 16.

If each dielectric structure 54 includes a first piece of dielectrictape or film attached to the active surface 14 of the firstsemiconductor die 12 and a second piece of dielectric tape or filmattached to both the first piece of dielectric tape or film and theactive surface 18 of the second semiconductor die 16, the first piecesof dielectric tape or film may be applied to the first semiconductor die12 prior to forming the laterally extending conductive elements 26. Thesecond pieces of dielectric tape or film may be applied to the secondsemiconductor die 16 prior to at least partially securing the secondsemiconductor die 16 to the first semiconductor die 12 by way of theconductive structures 52. Alternatively, the second pieces of dielectrictape or film may be applied to the first pieces of dielectric tape orfilm over the laterally extending conductive elements 26, and the secondsemiconductor die 16 may subsequently be attached to the second piecesof dielectric tape or film.

An encapsulant material 36 may be provided using techniques known in theart such as, for example, transfer molding or injection moldingprocesses or radial-spread coating processes (often referred to as“glob-top” processes).

Optionally, a dielectric underfill or adhesive material (not shown) maybe provided in the areas between the first semiconductor die 12 and thesecond semiconductor die 16 not occupied by the dielectric structures54, laterally extending conductive elements 26, or conductive structures52 prior to encapsulating the assembly with the encapsulant material 36.The underfill material may be the same as or different from theencapsulant material 36. In either case, the underfill material mayinclude a dielectric material and may be selected and/or tailored toexhibit a thermal expansion coefficient that is substantially similar toa coefficient of thermal expansion exhibited by the first semiconductordie 12 and the second semiconductor die 16.

In alternative methods that also embody teachings of the presentinvention, laterally extending conductive elements 26 may be providedover and positioned relative to the first semiconductor die 12 prior toattaching the first semiconductor die 12 to the substrate 22, the secondsemiconductor die 16 may be attached to the first semiconductor die 12prior to attaching the first semiconductor die 12 to the substrate 22,or the dielectric structures 54 may be provided on and secured to thesecond semiconductor die 16 prior to securing the second semiconductordie 16 to the first semiconductor die 12. These variations are merelyexamples of various embodiments of methods that embody teachings of thepresent invention. Many other variations in method sequence, etc., arealso possible and within the scope of the present invention.

Furthermore, the methods described herein may be adapted to be performedat the wafer level. Referring to FIG. 7A, a plurality of firstsemiconductor dice 12 may be formed on or in a wafer 55 as known in theart. By way of example and not limitation, at least a portion 54′ ofeach dielectric structure 54 may be applied to the plurality of firstsemiconductor dice 12 at the wafer level, as shown in FIG. 7A. Referringto FIG. 7B, a plurality of second semiconductor dice 16 may be formed onor in a wafer 56 as known in the art. At least a portion 54′ of eachdielectric structure 54 and/or the conductive structures 52 may beapplied to the plurality of second semiconductor dice 16 at the waferlevel, as shown in FIG. 7B. Moreover, a plurality of semiconductordevice assemblies 50 (FIG. 3) may be fabricated on a relatively largesubstrate 57 shown in FIG. 7C that includes a plurality of integralsubstrates 22. By way of example and not limitation, the wafer 55 shownin FIG. 7A that comprises the plurality of first semiconductor dice 12may be diced to form individual first semiconductor dice 12, which maybe attached to the individual substrates 22 of the relatively largersubstrate 57 shown in FIG. 7C. Laterally extending conductive elements26 (not shown in FIGS. 7A-7C) then may be coupled to the individualsubstrates 22 and the respective first semiconductor dice 12. The wafer56 shown in FIG. 7B that comprises the plurality of second semiconductordice 16 may be diced to form individual second semiconductor dice 16,which may be attached to the first semiconductor dice 12 while they aredisposed on the relatively larger substrate 57.

Alternatively, the spacing of the second semiconductor dice 16 in thewafer 56 shown in FIG. 7B may be configured such that the wafer 56 maybe applied over the plurality of first semiconductor dice 12 while theyare secured to the relatively larger substrate 57 shown in FIG. 7C.

If the laterally extending conductive elements 26 (not shown in FIGS.7A-7C) comprise leads of a lead frame or conductive traces carried by aflexible dielectric substrate (such as those used in conventionaltape-automated bonding (TAB) processes), at least a portion of thelaterally extending conductive elements 26 may be positioned above thefirst semiconductor dice 12 of the wafer 55, and the wafer 56 may bepositioned over the wafer 55 and the laterally extending conductiveelements 26. The first semiconductor dice 12 may be structurally andelectrically coupled to the second semiconductor dice 16 by way of theconductive structures 52 as previously described, and electricalcommunication may be provided between the laterally extending conductiveelements 26 (not shown in FIGS. 7A-7C) and at least one of the bond pads28, the bond pads 28′, and the conductive structures 52, as alsopreviously described. The wafer 55, the wafer 56, and the relativelylarger substrate 57 then may be simultaneously diced, and electricalcommunication may be provided between the laterally extending conductiveelements 26 (not shown in FIGS. 7A-7C) and the individual substrates 22using, for example, bond wires or conductive or conductor filled epoxyselectively provided along the lateral edges of the resulting individualsemiconductor device assemblies.

Another illustrative semiconductor device assembly 60 that embodiesteachings of the present invention is shown in FIGS. 4A and 4B. Thesemiconductor device assembly 60 is similar to the semiconductor deviceassembly 50 previously described in relation to FIG. 3 and includes amulti-chip module having a first semiconductor die 12, a secondsemiconductor die 16, and an optional substrate 22.

Referring to FIG. 4A, the active surface 14 of the first semiconductordie 12 faces the active surface 18 of the second semiconductor die 16.At least some of the bond pads 28 of the first semiconductor die 12 maybe disposed in a first selected connection pattern, and at least some ofthe bond pads 28′ of the second semiconductor die 16 may be disposed ina second selected connection pattern that is a mirror image of the firstselected connection pattern. In this configuration, at least some of thebond pads 28 of the first semiconductor die 12 may be aligned with atleast some of the bond pads 28′ of the second semiconductor die 16 whenthe first semiconductor die 12 and the second semiconductor die 16 arepositioned and aligned in a face-to-face configuration, as shown in FIG.4A.

The semiconductor device assembly 60 may also include a plurality ofelectrically conductive structures 52, each of which may be electricallyand structurally coupled to a bond pad 28 of the first semiconductor die12 and to a bond pad 28′ of the second semiconductor die 16 in a mannersuch as that described in relation to the semiconductor device assembly50 shown in FIG. 3.

Laterally extending conductive elements 26 may be used to provideelectrical communication between the integrated circuitry within thesemiconductor dice 12, 16 and conductive terminals 30 on or in a surfaceof the substrate 22. A first end of each laterally extending conductiveelement 26 may be structurally and electrically coupled directly to aconductive terminal 30 on or in a surface of the substrate 22, and asecond end of each laterally extending conductive element 26 may bestructurally and electrically coupled to at least one of a bond pad 28of the first semiconductor die 12, a bond pad 28′ of the secondsemiconductor die 16, and a conductive structure 52.

The semiconductor device assembly 60 may also include a plurality ofdielectric structures 62 disposed between the active surface 14 of thefirst semiconductor die 12 and the active surface 18 of the secondsemiconductor die 16 in a manner similar to that previously described inrelation to the semiconductor device assembly 50 shown in FIG. 3. Atleast a portion of each laterally extending conductive element 26 maypass through a dielectric structure 62. As shown in FIG. 4A, thedielectric structures 62 may include a first piece of dielectric tape orfilm 64 attached to the active surface 14 of the first semiconductor die12, and a second piece of dielectric tape or film 66 attached to boththe first piece of dielectric tape or film 64 and the active surface 18of the second semiconductor die 16. By way of example and notlimitation, the first piece of dielectric tape or film 64 and the secondpiece of dielectric tape or film 66 each may include a double-sidedadhesive tape. The double-sided adhesive tape may include, for example,a polymer material such as polyimide and may have a pressure sensitiveadhesive applied to both major sides of the tape. Such double-sidedadhesive tapes are commercially available from, for example, LintecCorporation of Tokyo, Japan. In this configuration, each dielectricstructure 62 may be configured to support and position at least aportion of the laterally extending conductive element 26 passingtherethrough between the active surface 14 of the first semiconductordie 12 and the active surface 18 of the second semiconductor die 16,which may prevent physical contact and/or electrical shorting betweenthe laterally extending conductive elements 26 and the active surfaces14, 18 of the semiconductor dice 12, 16.

Referring to FIG. 4B, the bond pads 28 of the first semiconductor die 12may be disposed in a first selected connection pattern or array, and thebond pads 28′ of the second semiconductor die 16 (not shown in FIG. 4B)may be disposed in a second selected connection pattern or array that isa mirror image of the first selected connection pattern or array. Asshown in FIG. 4B, in some embodiments the patterns in which the bondpads 28, 28′ are disposed may include two or more rows of offset orstaggered bond pads 28, 28′, which may allow relatively increaseddensity packing or placement of the bond pads 28, 28′ on the activesurfaces of the semiconductor dice 12, 16. Furthermore, the conductiveterminals 30 on the surface of the substrate 22 may also be offset orstaggered (not shown) in a manner similar to the bond pads 28, 28′.

As also seen in FIG. 4B, each piece of dielectric tape or film 64 may besubstantially elongated and may extend along or proximate a lateral edgeof the semiconductor dice 12, 16. In this configuration, each of thelaterally extending conductive elements 26 may be positioned orsandwiched between a first piece of dielectric tape or film 64 and asecond piece of dielectric tape or film 66, and at least a portion ofeach of a plurality of laterally extending conductive elements 26 maypass through each dielectric structure 62 (FIG. 4A). Alternatively, thesemiconductor device assembly 60 may include a plurality of discretedielectric structures through which at least a portion of only onelaterally extending conductive element 26 extends.

A portion of yet another illustrative semiconductor device assembly 70that embodies teachings of the present invention is shown in FIG. 5.FIG. 5 is a cross-sectional view of the semiconductor device assembly70, the cross-sectional view being similar to the cross-sectional viewof the semiconductor device assembly 60 shown in FIG. 4B. Thesemiconductor device assembly 70 is similar to the semiconductor deviceassembly 60 previously described and includes a multi-chip module havinga first semiconductor die 12, a second semiconductor die 16 (not shownin FIG. 5), and a substrate 22. In contrast to the semiconductor deviceassembly 60 shown in FIGS. 4A and 4B, the semiconductor device assembly70 includes a plurality of discrete dielectric structures through whichat least a portion of only one laterally extending conductive element 26extends. For example, each discrete dielectric structure may include afirst piece of dielectric tape or film 72 attached to the firstsemiconductor die 12 and a second piece of dielectric tape or film (notshown) attached to the second semiconductor die 16 (not shown in FIG. 5)and aligned with the first piece of dielectric tape or film 72. By wayof example and not limitation, each piece of dielectric tape or film mayinclude a double-sided adhesive polyimide tape as previously describedin relation to the semiconductor device assembly 60 shown in FIGS. 4Aand 4B.

As further shown in FIG. 5, the bond pads 28 on the active surface ofthe first semiconductor die 12 and the bond pads 28′ on the activesurface of the second semiconductor die 16 may be disposed in aconnection pattern in which each bond pad 28, 28′ is located proximate alateral edge of the respective semiconductor die 12, 16.

While each of the previously described semiconductor device assembliesinclude a first semiconductor die 12 having bond pads 28 arranged ordisposed in a first selected connection pattern and a secondsemiconductor die 16 having bond pads 28′ arranged or disposed in asecond selected connection pattern that is identical to, or a mirrorimage of, the first selected connection pattern, other semiconductordevice assemblies that also embody teachings of the present inventionmay include a second semiconductor die 16 having bond pads 28′ that arearranged or disposed in a second selected connection pattern that is notidentical to, or a mirror image of, a first selected connection patternof bond pads 28 of a first semiconductor die 12. By way of example andnot limitation, in such a semiconductor device assembly, conductivestructures 52 may be provided on each of the bond pads 28 of the firstsemiconductor die 12 in addition to each of the bond pads 28′ of thesecond semiconductor die 16. Relatively rigid laterally extendingconductive elements 26 such as conductive leads of a lead frame then maybe provided between the active surface 14 of the first semiconductor die12 and the active surface 18 of the second semiconductor die 16. A firstside of at least some of the laterally extending conductive elements 26may be electrically and structurally coupled to a conductive structure52 attached to a bond pad 28 of the first semiconductor die 12, and asecond side of the same laterally extending conductive elements 26 maybe electrically and structurally coupled to a conductive structure 52attached to a bond pad 28′ of the second semiconductor die 16. In such aconfiguration, the bond pads 28 of the first semiconductor die 12 maynot and need not be aligned with the bond pads 28′ of the secondsemiconductor die 16 when the first semiconductor die 12 and the secondsemiconductor die 16 are in a face-to-face configuration.

As previously discussed, the teachings of the present invention are notlimited to devices and methods that include only two semiconductor dice.Still another illustrative semiconductor device assembly 80 thatembodies teachings of the present invention is shown in FIG. 6. Thesemiconductor device assembly 80 is similar to the semiconductor deviceassembly 60 previously described in relation to FIGS. 4A and 4B andincludes a multi-chip module having a first semiconductor die 12, asecond semiconductor die 16, and a substrate 22. The semiconductordevice assembly 80 further includes, however, additional semiconductordice.

By way of example and not limitation, the semiconductor device assembly80 may include an additional first semiconductor die 12′ and anadditional second semiconductor die 16′. An active surface 14 of theadditional first semiconductor die 12′ faces an active surface 18 of theadditional second semiconductor die 16′. At least some of the bond pads28 of the first semiconductor die 12 are disposed in a first selectedconnection pattern, and at least some of the bond pads 28′ of the secondsemiconductor die 16 are disposed in a second selected connectionpattern that is a mirror image of the first selected connection pattern.Similarly, at least some of the bond pads 28″ of the additional firstsemiconductor die 12′ are disposed in a third selected connectionpattern, and at least some of the bond pads 28′″ of the additionalsecond semiconductor die 16′ are disposed in a fourth selectedconnection pattern that is a mirror image of the third selectedconnection pattern. The third selected connection pattern may beidentical to the first selected connection pattern, and the fourthselected connection pattern may be identical to the second selectedconnection pattern. At least some of the bond pads 28″ of the additionalfirst semiconductor die 12′ may be aligned with at least some of thebond pads 28′″ of the additional second semiconductor die 16′ when theadditional first semiconductor die 12′ and the additional secondsemiconductor die 16′ are in a face-to-face configuration, as shown inFIG. 6.

The semiconductor device assembly 80 may also include an additionalplurality of electrically conductive structures 52′, each of which maybe electrically and structurally coupled to a bond pad 28″ of theadditional first semiconductor die 12′ and to a bond pad 28′″ of theadditional second semiconductor die 16′.

Additional laterally extending conductive elements 26′ may be used toprovide electrical communication between the integrated circuitry withinthe semiconductor dice 12′, 16′ and conductive terminals 30 on or in asurface of the substrate 22. A first end of each additional laterallyextending conductive element 26′ may be structurally and electricallycoupled directly to a conductive terminal 30 on a surface of thesubstrate 22, and a second end of each additional laterally extendingconductive element 26′ may be structurally and electrically coupleddirectly to at least one of a bond pad 28″ of the additional firstsemiconductor die 12′, a bond pad 28′″ of the additional secondsemiconductor die 16′, and an additional conductive structure 52′.

In alternative embodiments, the second additional semiconductor die 16′may be eliminated from the semiconductor device assembly 80, or thesemiconductor device assembly 80 may include any number of additionalsemiconductor dice.

The semiconductor device assembly 80 may also include an encapsulantmaterial 36 as previously described herein.

A block diagram of an illustrative electronic system 90 that embodiesteachings of the present invention is shown in FIG. 8. The electronicsystem 90 includes at least one memory device 92, at least oneelectronic signal processing device 94 (often referred to as a“microprocessor”), and at least one input or output device 96 such as,for example, a mouse or other pointing device, keyboard, control panel,monitor, printer, etc., which may communicate electrically with at leastone of the memory device 92 and the electronic signal processing device94.

The at least one memory device 92 may include a semiconductor deviceassembly that embodies teachings of the present invention such as, byway of non-limiting example, the previously described semiconductordevice assembly 50 shown in FIG. 3, the previously describedsemiconductor device assembly 60 shown in FIGS. 4A and 4B, thepreviously described semiconductor device assembly 70 shown in FIG. 5,or the previously described semiconductor device assembly 80 shown inFIG. 6. In alternative embodiments, the electronic signal processingdevice 94 may include a semiconductor device assembly that embodiesteachings of the present invention.

The teachings of the present invention may enable the fabrication ofmulti-chip modules that include less laterally extending conductiveelements such as bond wires, conductive leads, conductive traces carriedby a flexible dielectric substrate such as tape or film, such as thoseused in conventional tape automated bonding (TAB) processes, etc.,thereby reducing the number of elements and steps required to fabricatea multi-chip module.

While the present invention has been described in terms of certainillustrated embodiments and variations thereof, it will be understoodand appreciated by those of ordinary skill in the art that the inventionis not so limited. Rather, additions, deletions and modifications to theillustrated embodiments may be effected without departing from thespirit and scope of the invention as defined by the claims, whichfollow.

What is claimed is:
 1. A semiconductor device assembly, comprising: aplurality of vertically stacked discrete dielectric structures disposedbetween an active surface of a first semiconductor die and an activesurface of a second semiconductor die, the active surface of the firstsemiconductor die facing the active surface of the second semiconductordie; and a plurality of laterally extending conductive elements, a firstend of each laterally extending conductive element being structurallyand electrically coupled to a conductive terminal of a substrate; asecond end of each laterally extending conductive element beingstructurally and electrically coupled to at least one of a bond pad ofthe first semiconductor die, a bond pad of the second semiconductor die,and a conductive structure electrically and structurally coupled to abond pad of the first semiconductor die and a bond pad of the secondsemiconductor die; wherein an intermediate portion of each laterallyextending conductive element is disposed between and in contact with atleast two of the plurality of vertically stacked discrete dielectricstructures.
 2. The semiconductor device assembly of claim 1, whereineach laterally extending conductive element of the plurality comprises abond wire.
 3. The semiconductor device assembly of claim 1, wherein eachlaterally extending conductive element of the plurality is disposedadjacent and in contact with a flexible dielectric substrate.
 4. Thesemiconductor device assembly of claim 1, wherein at least a portion ofat least one laterally extending conductive element passes through atleast one of the plurality of vertically stacked discrete dielectricstructures.
 5. The semiconductor device assembly of claim 1, wherein theactive surface of the first semiconductor die comprises a plurality ofbond pads disposed in a pattern.
 6. The semiconductor device assembly ofclaim 5, wherein the active surface of the second semiconductor diecomprises a plurality of bond pads disposed in a mirror-image pattern tothe pattern of the bond pads of the first semiconductor die.
 7. Thesemiconductor device assembly of claim 1, wherein at least one bond padof the first semiconductor die is aligned with at least one bond pad ofthe second semiconductor die.
 8. The semiconductor device assembly ofclaim 1, further comprising: a second plurality of vertically stackeddiscrete dielectric structures disposed between an active surface of athird semiconductor die and an active surface of a fourth semiconductordie, the active surface of the third semiconductor die facing the activesurface of the fourth semiconductor die; and a second plurality oflaterally extending conductive elements, a first end of each laterallyextending conductive element being structurally and electrically coupledto a conductive terminal of the substrate; a second end of eachlaterally extending conductive element of the second plurality beingstructurally and electrically coupled to at least one of a bond pad ofthe third semiconductor die, a bond pad of the fourth semiconductor die,and a conductive structure electrically and structurally coupled to abond pad of the third semiconductor die and a bond pad of the fourthsemiconductor die; wherein an intermediate portion of each laterallyextending conductive element of the second plurality of laterallyextending conductive elements is disposed between and in contact with atleast two of the second plurality of vertically stacked discretedielectric structures.
 9. The semiconductor device assembly of claim 1,wherein the conductive structure electrically and structurally coupledto a bond pad of the first semiconductor die and a bond pad of thesecond semiconductor die comprises a material selected from the groupconsisting of gold, silver, platinum, copper, and alloys and mixturesthereof.
 10. The semiconductor device assembly of claim 1, wherein theconductive structure electrically and structurally coupled to a bond padof the first semiconductor die and a bond pad of the secondsemiconductor die comprises a conductor-filled epoxy material.
 11. Thesemiconductor device assembly of claim 1, wherein at least one bond padof the first semiconductor die is electrically isolated from all bondpads of the second semiconductor die.
 12. The semiconductor deviceassembly of claim 1, wherein the plurality of vertically stackeddiscrete dielectric structures separates the second semiconductor diefrom the first semiconductor die by a fixed, predetermined distance. 13.The semiconductor device assembly of claim 1, wherein each verticallystacked discrete dielectric structure of the plurality is configured tosupport at least one of the plurality of laterally extending conductiveelements between the first semiconductor die and the secondsemiconductor die.
 14. The semiconductor device assembly of claim 1,wherein each vertically stacked discrete dielectric structure of theplurality comprises a material selected from the group consisting of athermoplastic resin and a thermoset polymer resin.
 15. The semiconductordevice assembly of claim 1, further comprising an encapsulant materialphysically surrounding and electrically insulating the firstsemiconductor die and the second semiconductor die.
 16. A method offorming a semiconductor device assembly, the method comprising:structurally and electrically coupling a first end of each of aplurality of laterally extending conductive elements to a conductiveterminal of a substrate; structurally and electrically coupling a secondend of each laterally extending conductive element to at least one of abond pad of a first semiconductor die, a bond pad of a secondsemiconductor die, and a conductive structure electrically andstructurally coupled to the bond pad of the first semiconductor die orthe bond pad of the second semiconductor die; disposing each laterallyextending conductive element between and in contact with at least two ofa plurality of discrete dielectric structures; and vertically stackingthe at least two of the plurality of discrete dielectric structuresbetween an active surface of the first semiconductor die and an activesurface of the second semiconductor die, wherein the active surface ofthe first semiconductor die faces the active surface of the secondsemiconductor die.
 17. The method of claim 16, further comprisingelectrically coupling the bond pad of the first semiconductor die to thebond pad of the second semiconductor die.
 18. The method of claim 16,wherein disposing each laterally extending conductive element betweenand in contact with at least two of a plurality of discrete dielectricstructures comprises applying a plurality of discrete dielectricstructures to the active surface of at least one of the firstsemiconductor die and the second semiconductor die at a wafer level. 19.The method of claim 16, wherein disposing each laterally extendingconductive element between and in contact with at least two of aplurality of discrete dielectric structures comprises providing aplurality of discrete dielectric structures each comprising at least onematerial selected from the group consisting of silicone, asilicone-based material, epoxy, and an epoxy-based material.
 20. Themethod of claim 16, wherein disposing each laterally extendingconductive element between and in contact with at least two of aplurality of discrete dielectric structures comprises disposing eachlaterally extending conductive element between two discrete pieces oftape.